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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BF420; BF422 NPN high-voltage transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09
Philips Semiconductors
Product specification
NPN high-voltage transistors
FEATURES * Low feedback capacitance. APPLICATIONS * Class-B video output stages in colour television and professional monitor equipment. DESCRIPTION NPN transistors in a TO-92 plastic package. PNP complements: BF421 and BF423.
1 handbook, halfpage 2 3
BF420; BF422
PINNING PIN 1 2 3 base collector emitter DESCRIPTION
2 1 3
MAM259
Fig.1
Simplified outline (TO-92) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF420 BF422 VCEO collector-emitter voltage BF420 BF422 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tamb 25 C IC = 25 mA; VCE = 20 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open base - - - - 50 - 60 300 250 100 830 - 1.6 - pF MHz V V mA mW open emitter - - 300 250 V V CONDITIONS MIN. MAX. UNIT
1996 Dec 09
2
Philips Semiconductors
Product specification
NPN high-voltage transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF420 BF422 VCEO collector-emitter voltage BF420 BF422 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Transistor mounted on a printed-circuit board. THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1. Transistor mounted on a printed-circuit board. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER collector cut-off current IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 C IEBO hFE VCEsat Cre fT emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz CONDITIONS PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb 25 C; note 1 open collector open base PARAMETER collector-base voltage CONDITIONS open emitter
BF420; BF422
MIN. - - - - - - - - - -65 - -65
MAX. 300 250 300 250 5 50 100 50 830 +150 150 +150
UNIT V V V V V mA mA mA mW C C C
VALUE 150
UNIT K/W
MIN. - - - 50 - - 60
MAX. 10 10 50 - 0.6 1.6 -
UNIT nA A nA V pF MHz
1996 Dec 09
3
Philips Semiconductors
Product specification
NPN high-voltage transistors
PACKAGE OUTLINE
BF420; BF422
andbook, full pagewidth
0.40 min
4.2 max 1.7 1.4 1 4.8 max 2.54 2 3 0.66 0.56 5.2 max 12.7 min 0.48 0.40
2.0 max
(1)
MBC014 - 1
Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled.
Fig.2 TO-92.
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Dec 09
4
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF420; BF422
1996 Dec 09
5
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF420; BF422
1996 Dec 09
6
Philips Semiconductors
Product specification
NPN high-voltage transistors
NOTES
BF420; BF422
1996 Dec 09
7
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1996
Internet: http://www.semiconductors.philips.com
SCA52
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
117041/00/02/pp8
Date of release: 1996 Dec 09
Document order number:
9397 750 01563

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